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& ' () (' * ( " ( ' ) ) ) ') apm2504n handling code tem p. range package code package code u : to -252 operating junction temp. range c : -55 to 150c handling code tu : tube tr : tape & reel lead free code l : lead free device blank : original device apm2504n u : apm2504n xxxxx xxxxx - date code lead free code

? 25v/75a , r ds(on) =3.6m ? (typ.) @ v gs =10v r ds(on) =5.4m ? (typ.) @ v gs =4.5v ? ? ? ? ? super high dense cell design ? ? ? ? ? reliable and rugged ? ? ? ? ? lead free available (rohs compliant) ? power management in desktop computer or dc/dc converters top view of to-252 n-channel mosfet g d s g s d note: anpec lead-free products contain molding compounds/die attach materials and 100% matte in plate termina- tion finish; which are fully compliant with rohs and compatible with both snpb and lead-free soldiering operations. anpec lead-free products meet or exceed the lead-free requirements of ipc/jedec j std-020c for msl classifica- tion at lead-free peak reflow temperature.
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symbol parameter rating unit common ratings (t a = 25c) v dss drain-source voltage 25 v gss gate-source voltage 20 v i s diode continuous forward current 20 a t j maximum junction temperature 150 c t stg storage temperature range -55 to 150 c mounted on large heat sink t c =25 c 180 i dp 300 s pulse drain current tested t c =100 c 100 a t c =25 c 75 * i d continuous drain current t c =100 c 50 a t c =25 c 50 p d maximum power dissipation t c =100 c 20 w r jc thermal resistance-junction to case 2.5 c/w mounted on pcb of 1in 2 pad area t a =25 c 180 i dp 300 s pulse drain current tested t a =100 c 100 a t a =25 c 19 i d continuous drain current t a =100 c 12 a t a =25 c 2.5 p d maximum power dissipation t a =100 c 1 w r ja thermal resistance-junction to ambient 50 c/w mounted on pcb of minimum footprint t a =25 c 180 i dp 300 s pulse drain current tested t a =100 c 100 a t a =25 c 15 i d continuous drain current t a =100 c 9 a t a =25 c 1.6 c/w p d maximum power dissipation t a =100 c 0.6 c/w r ja thermal resistance-junction to ambient 75 c/w note: * current limited by bond wire.
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(t a = 25 c unless otherwise noted) apm2504nu symbol parameter test condition min. typ. max. unit drain-source avalanche ratings e as drain-source avalanche energy i d =35a, v dd =15v 100 mj static characteristics bv dss drain-source breakdown voltage v gs =0v, i ds =250 a 25 v i dss zero gate voltage drain current v ds =20v, v gs =0v 1 a v gs(th) gate threshold voltage v ds =v gs , i ds =250 a 1.3 1.8 2.5 v i gss gate leakage current v gs =20v, v ds =0v 100 na v gs =10v, i ds =40a 3.6 4.5 r ds(on) a drain-source on-state resistance v gs =4.5v, i ds =20a 5.4 7 m ? diode characteristics v sd a diode forward voltage i sd =20a, v gs =0v 0.8 1.3 v dynamic characteristics b r g gate resistance v gs =0v,v ds =0v,f=1mhz 1 ? c iss input capacitance 4350 pf c oss output capacitance 920 pf c rss reverse transfer capacitance v gs =0v, v ds =15v, frequency=1.0mhz 670 pf t d(on) turn-on delay time 18 34 ns t r turn-on rise time 21 39 ns t d(off) turn-off delay time 85 130 ns t f turn-off fall time v dd =10v, r l =10 ? , i ds =1a, v gen =4.5v, r g =6 ? 25 40 ns gate charge characteristics b q g total gate charge 38.5 50 nc q gs gate-source charge 13.6 nc q gd gate-drain charge v ds =15v, v gs =4.5v, i ds =20a 17.2 nc notes: a : pulse test ; pulse width 300 s, duty cycle 2%. b : guaranteed by design, not subject to production testing.
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power dissipation p tot - power (w) t j - junction temperature ( c) i d - drain current (a) drain current t j - junction temperature ( c) safe operation area v ds - drain - source voltage (v) i d - drain current (a) normalized transient thermal resistance thermal transient impedance square wave pulse duration (sec) 0 20 40 60 80 100 120 140 160 180 0 10 20 30 40 50 60 t c =25 o c 0.1 1 10 70 0.1 1 10 100 300 rds(on) limit 1s t c =25 o c 10ms 100ms dc 1ms 1e-4 1e-3 0.01 0.1 1 10 100 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r ja :50 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 60 70 80 90 t c =25 o c,v g =10v
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% v ds - drain - source voltage (v) i d - drain current (a) output characteristics r ds(on) - on - resistance (m ? ) drain-source on resistance i d - drain current (a) transfer characteristics v gs - gate - source voltage (v) i d - drain current (a) t j - junction temperature ( c) gate threshold voltage normalized threshold vlotage &'
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($)* 01234567 0 20 40 60 80 100 120 140 160 180 t j =125 o c t j =25 o c t j =-55 o c -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds =250 a 0.0 0.4 0.8 1.2 1.6 2.0 0 20 40 60 80 100 120 140 160 180 3.5v 4.5v 5v 4v 3v v gs = 6,7,8,9,10v 0 30 60 90 120 150 180 0 1 2 3 4 5 6 7 8 9 10 v gs =4.5v v gs =10v
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- drain-source on resistance normalized on resistance t j - junction temperature ( c) v sd - source - drain voltage (v) source-drain diode forward i s - source current (a) v ds - drain - source voltage (v) c - capacitance (pf) capacitance gate charge q g - gate charge (nc) v gs - gate-source voltage (v) &'
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($)* -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v gs = 10v i ds = 40a r on @t j =25 o c: 3.6m ? 0.0 0.3 0.6 0.9 1.2 1.5 1 10 100 200 t j =150 o c t j =25 o c 0 5 10 15 20 25 0 1000 2000 3000 4000 5000 6000 7000 8000 frequency=1mhz crss coss ciss 0 1530456075 0 2 4 6 8 10 v ds =10v i d =20a
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. to-252( reference jedec registration to-252) millimeters inches dim min. max. min. max. a 2.18 2.39 0.086 0.094 a1 0.89 1.27 0.035 0.050 b 0.508 0.89 0.020 0.035 b2 5.207 5.461 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.334 6.22 0.210 0.245 e 6.35 6.73 0.250 0.265 e1 3.96 5.18 0.156 0.204 h 9.398 10.41 0.370 0.410 l 0.51 0.020 l1 0.64 1.02 0.025 0.040 l2 0.89 2.032 0.035 0.080 l2 d l1 b b2 e c1 a h l c a1 e1

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t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 temperature time critical zone t l to t p terminal material solder-plated copper (solder material : 90/10 or 63/37 snpb), 100%sn lead solderability meets eia specification rsi86-91, ansi/j-std-002 category 3. ",$

(ir/convection or vpr reflow) $

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profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat temperature min (tsmin) temperature max (tsmax) time (min to max) (ts) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: temperature (t l ) time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak/classificatioon temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10-30 seconds 20-40 seconds ramp-down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. notes: all temperatures refer to topside of the package .measured on the body surface.
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0 test item method description solderability mil-std-883d-2003 245 c,5 sec holt mil-std 883d-1005.7 1000 hrs bias @ 125 c pct jesd-22-b, a102 168 hrs, 100% rh, 121 c tst mil-std 883d-1011.9 -65 c ~ 150 c, 200 cycles $
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'& table 2. pb-free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350-2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. table 1. snpb entectic process ? package peak reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 <2.5 mm 240 +0/-5 c 225 +0/-5 c 2.5 mm 225 +0/-5 c 225 +0/-5 c $

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!$ application a b c j t1 t2 w p e 330 3100 213 0. 5 2 0.5 16.4 + 0.3 -0.2 2.5 0.5 16+ 0.3 - 0.1 8 0.1 1.75 0.1 f d d1 po p1 ao bo ko t to-252 7.5 0.1 1.5 +0.1 1.5 0.25 4.0 0.1 2.0 0.1 6.8 0.1 10.4 0.1 2.5 0.1 0.3 0.05 application carrier width cover tape width devices per reel to- 252 16 13.3 2500 $+.
anpec electronics corp. head office : 5f, no. 2 li-hsin road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369 $.&

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($)* a j b t2 t1 c (mm)

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